Recrystallized Silicon Carbide Plate
1.Recrystallized silicon carbide (RSiC) plate is made from high-purity and highly active SiC raw materials through high-temperature recrystallization technology.
2.Recrystallized SiC plate combines the good properties of silicon carbide,such as high hardness,high wear resistance,high-temperature strength,good high-temperature stability,and good thermal shock resistance,energy conservation and consumption reduction.
3.RSiC plate’s operating temperature is close to 1650℃ (oxidation atmosphere).
2.Recrystallized SiC plate combines the good properties of silicon carbide,such as high hardness,high wear resistance,high-temperature strength,good high-temperature stability,and good thermal shock resistance,energy conservation and consumption reduction.
3.RSiC plate’s operating temperature is close to 1650℃ (oxidation atmosphere).
Technical data sheet
|
Item |
Data |
|
SiC |
≥99% |
|
Bulk Density |
2.65-2.75g/cm3 |
|
Apparent porosity |
15%-16% |
|
Modulus of rupture at 20℃ |
90-100MPa |
|
Modulus of rupture at 1400℃ |
110-120MPa |
|
Compressive strength |
≥300MPa |
|
Hardness at 20℃ |
1800-2000kg/mm2 |
|
Thermal expansion at 20℃-1000℃ |
4.7% |
|
Fracture Toughness at 20℃ |
1.8-2.0 MPAXM1/2 |
|
Thermal conductivity at 1200℃ |
35-36W/m.K |
|
Thermal expansion at 20℃-1000℃ |
4.6 1×10-6 |
|
Max service temperature |
1650℃ |
Feature
1.Lighter in weight and higher using temperature compared to other heat-resistant materials.
2.Excellent thermal conductivity to reduce thermal energy loss and achieve energy-saving goals.
3.Can make with large size and thin thickness.
Application
